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| Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification 4.50.1 Unit: mm 1.60.2 1.50.1 Features * Low collector-emitter saturation voltage VCE(sat) * Satisfactory operation performances at high efficiency with the lowvoltage power supply. * Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.0+0.25 -0.20 2.50.1 3 1.0+0.1 -0.2 1 0.40.08 1.50.1 3 3 2 0.50.08 0.40.04 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 20 20 5 1 2 1 150 -55 to +150 cm2 Unit V V V A A W C C 3.00.15 45 1 : Base 2 : Collector 3 : Emitter MiniP3-F1 Package Marking Symbol: R Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion Electrical Characteristics Ta = 25C 3C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCEO VEBO ICBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob Conditions IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 6 V, IE = -50 mA, f = 200 MHz VCB = 6 V, IE = 0, f = 1 MHz 150 18 90 50 0.5 1.2 V V MHz pF Min 20 5 1 280 Typ Max Unit V V A Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 90 to 155 R 130 to 210 S 180 to 280 0.4 max. 2.60.1 Publication date: December 2002 SJC00214CED 1 2SD1280 PC Ta 1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 1.2 IC VCE Ta = 25C 1.2 IC VCE(sat) Ta = 25C IC / IB = 10 20 Collector power dissipation PC (W) 1.0 1.0 1.0 IB = 5.0 mA 4.5 mA 4.0 mA 3.5 mA 3.0 mA 2.5 mA 2.0 mA 1.5 mA 1.0 mA 0.2 0.5 mA Collector current IC (A) 0.8 0.8 Collector current IC (A) 0.8 0.6 0.6 0.6 0.4 0.4 0.4 0.2 0.2 0 0 0 20 40 60 80 100 120 140 160 0 0.4 0.8 1.2 1.6 2.0 0 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) IC I B VCE = 2 V Ta = 25C 1.0 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 100 VBE(sat) IC 100 1.2 Collector current IC (A) 10 Base-emitter saturation voltage VBE(sat) (V) IC / IB = 20 IC / IB = 10 10 0.8 25C 1 Ta = -25C 75C 0.6 1 Ta = 75C 25C 0.1 -25C 0.4 0.1 0.2 0 0 2 4 6 8 10 12 0.01 0.01 0.1 1 10 0.01 0.01 0.1 1 10 Base current IB (mA) Collector current IC (A) Collector current IC (A) hFE IC 600 VCE = 2 V 200 175 fT I E VCB = 6 V Ta = 25C Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 50 IE = 0 f = 1 MHz Ta = 25C Forward current transfer ratio hFE Transition frequency fT (MHz) 500 40 150 125 100 75 50 25 0 -1 400 Ta = 75C 25C 200 -25C 30 300 20 10 100 0 0.01 0 0.1 1 10 -10 -100 1 10 100 Collector current IC (A) Emitter current IE (mA) Collector-base voltage VCB (V) 2 SJC00214CED 2SD1280 ICBO Ta 104 VCB = 10 V 105 ICEO Ta VCE = 18 V Safe operation area 10 ICP Single pulse Ta = 25C IC t=1s DC 0.1 t = 10 ms 104 103 102 102 10 10 Collector current IC (A) 0 20 40 60 80 100 120 140 160 103 1 ICBO (Ta) ICBO (Ta = 25C) ICEO (Ta) ICEO (Ta = 25C) 0.01 1 0 20 40 60 80 100 120 140 160 1 0.001 0.1 1 10 100 Ambient temperature Ta (C) Ambient temperature Ta (C) Collector-emitter voltage VCE (V) SJC00214CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL This datasheet has been download from: www..com Datasheets for electronics components. |
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